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BLF368
型号：BLF368
厂商：NXP
批号：10+
封装：原厂原封装
PDF下载
BLF3G22-30
UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
BLF4G10-160
UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130
UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
相关PDF
相关代理商
- 代理商
- 型号
- 数量
- 厂商
- 批号
- 封装
- 交易说明
- 询价
- QQ
-
深圳市大源实业科技有限公司
15302619915
- BLF368
- 2600
- freescal
- 22+
- N/A
- 原装，公司部分现货，有单来谈QQ:16115312..
- 立即询价
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北京元坤伟业科技有限公司
010-62104931
- BLF368.112
- 3000
- NXP/PH
- 0828(BS-
- 原厂封装
- 全新原装100%正品保证质量
- 立即询价
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北京元坤伟业科技有限公司
010-62104931
- BLF368112
- 4000
- Philips
- 09/10+
- 标准封装
- 全新原装100%正品保证质量
- 立即询价
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- BLF368
- 65
- PHILIPS
- 05+
- 原厂原装
- 现货低价热卖!只做原装正品！诚信经营
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深圳市桂鹏科技有限公司
0755-82810298
- BLF368,112
- 82810298
- NXP
- 15+
-
- 深圳现货★原厂品质★提供PCB板配单业务
- 立即询价
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- BLF368,112 优势
- 1400
- Philips
- 1742+
- 代理
- 假一罚万，原厂原装有COC，长期有订货
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- BLF368 优势
- 114
- NXP
- 10+
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- BLF368
- 25000
- GAL26V12C-20LJ
- 一级代理，深圳原装现
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- 代理热卖，全新原装
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- BLF368,112
- 7500
- Ampleon USA Inc.
- 2022
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- BLF368 高频器件
- 9800
- NXP/恩智浦
- 21+/22+
- SOT262A1
- 100%原装正品仓库现货★假一赔百★
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- BLF368
- 500
- PHILIPS
- 10+
- 高频管
- 专营高频管，全新原装现货
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