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BLF3G21-30
型号：BLF3G21-30
厂商：NXP
批号：18+
封装：N/A
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BLF3G22-30
UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
BLF4G10-160
UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130
UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
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- 代理商
- 型号
- 数量
- 厂商
- 批号
- 封装
- 交易说明
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- QQ
-
深圳市大源实业科技有限公司
15302619915
- BLF3G21-30
- 2600
- M/ACOM
- 22+
- SOP
- 原装，公司部分现货，有单来谈QQ:16115312..
- 立即询价
-
深圳市百润电子有限公司
17876146278
- BLF3G21-30
- 645
- Ampleon
- 21+
- NA
- 全新原装正品*海量现货库存*全网最低
- 立即询价
-
深圳市毅创辉电子科技有限公司
19129911934（手机优先微信同号）
- BLF3G21-30,112
- 2300
- NXP
- 13+
- ROHS
- 全新原装正品 欢迎来电0755-82865099
- 立即询价
-
- BLF3G21-30 现货
- 4290
- NXP
- 17+
- SOT467
- 原装现货价格优势
- 立即询价
-
- BLF3G21-30
- 15000
- NXP
- 22+
-
- 十年专营，供应原装正品！热卖现货！
- 立即询价
-
- BLF3G21-30
- 5000
- NXP
- 16+
- NA
- 原装正品，配单能手
- 立即询价
-
- BLF3G21-30
- 10000
- QORVO
- 18+
- /
- 原装正品 假一罚十
- 立即询价
-
- BLF3G21-30
- 948
- NXP
- 0926+
- SOT467
- 原装现货只有原装
- 立即询价
-
- BLF3G21-30
- 10000
- NXP
- 17
-
- 工厂客户提供样品测试，运费到付。提供原装正品无售后..
- 立即询价
-
- BLF3G21-30
- 333
- NXP/恩智浦
- 20+
- NA
- 以质为本，只做原装正品
- 立即询价
-
- BLF3G21-30
- 6000
- NXP
- 2126+
- SOT467
- 原装国内现货
- 立即询价
-
- BLF3G21-30,112
- 36000
- PhilipsSemiconducto
- 09+
- 原厂原封装
- 原装正品深圳现货热卖
- 立即询价
-
- BLF3G21-30
- 3158
- PHILIPS代理
- 14+
- 原封
- 咨询我们吧，有原装现货，可开16%增值税
- 立即询价