收藏本站
BLF369

型号：BLF369

厂商：

批号：15+

封装：

PDF下载
BLF3G22-30 UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
BLF4G10-160 UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130 UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
相关PDF

BLF378

BLF3G21-30

BLF3G21-30,112

BLF3G21-6

BLF3G21-6,112

BLF3G21-6,135

BLF3G22-30

BLF3G22-30,112

BLF3G22-30,135

BLF404

相关代理商

BLF404,115

BLF4G10-160

BLF4G10-160,112

BLF4G10LS-120

BLF4G10LS-120,112

BLF4G10LS-160

BLF4G10LS-160,112

BLF4G20-110B

BLF4G20-110B,112

BLF4G20LS-110B

代理商
型号
数量
厂商
批号
封装
交易说明
询价
QQ

  • BLF369
  • 1256
  • NXP
  • 09+
  • SMD
  • 全新原装现货库存价格优势，同时回收原装物料 
  • 立即询价

  • BLF369,112
  • 35000
  • MINI
  • 20+
  • 原厂封装
  • 100%进口原装正品公司现货库存 
  • 立即询价

  • BLF369
  • 6500
  • NXP
  • 16+
  • SMD
  • 全新原装现货!假一赔十! 
  • 立即询价

  • BLF369
  • 15000
  • NXP
  • 22+
  •  
  • 十年专营，供应原装正品！热卖现货！ 
  • 立即询价

  • BLF369
  • 4200
  • NXP
  • 16+
  • SMD
  • 全新原装欢迎询价下单 
  • 立即询价

  • BLF369112
  • 1755
  • NXP Semiconductors
  • 13+/14+
  • 原厂封装！
  • 原装正品！价优！优势货源放心订购！ 
  • 立即询价

  • BLF369
  • 10000
  • NXP
  • 17+
  •  
  • 优质货源工厂客户提供样品测试，运费到付。提供原装正.. 
  • 立即询价

  • BLF369
  • 20
  • NXP
  • 18+
  • N/A
  • 进口原装！现货热卖！欢迎来电咨询！！ 
  • 立即询价

  • BLF369
  • 6750
  • NXP代理
  • 18年现货
  • SMD
  • 咨询我们吧，有原装现货，可开16%增值税 
  • 立即询价
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*