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BLF277
型号：BLF277
厂商：PHILIPS
批号：201320+
封装：ROHS
PDF下载
BLF3G22-30
UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
BLF4G10-160
UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130
UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
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相关代理商
- 代理商
- 型号
- 数量
- 厂商
- 批号
- 封装
- 交易说明
- 询价
- QQ
-
深圳市毅创辉电子科技有限公司
19129491934(手机优先微信同号)
- BLF277
- 3555
- PHILIPS
- 201320+
- ROHS
- 原装正品，现货库存。400-800-0307
- 立即询价
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- BLF277
- 69800
- PHILIPS
- 22+
- SMD
- 授权代理直销,原厂原装现货,假一罚十,特价销售
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- BLF277
- 69800
- PHILIPS
- 22+
- SMD
- 授权代理直销,原厂原装现货,假一罚十,特价销售
- 立即询价
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- BLF277
- 2
- PHILIPS
- 95+
- SMD
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- 立即询价
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- BLF277
- 112870
- PHILIPS/飞利浦
- 22+
- NA
- 代理渠道，原装正品，假一赔十。
- 立即询价
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- BLF277
- 7600
- NXP
- 18+
- 专营系列
- 只做原装，只有原装，必须原装
- 立即询价
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- BLF277
- 30000
- NXP
- 17+/18+
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- 原装现货假一罚十
- 立即询价
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- BLF277
- 32500
- NXP
- 16+
- 专营系列
- 进口原装现货，一级代理商
- 立即询价
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- BLF277
- 35000
- 代理现货，可申请！
- 18+
- 一站式BOM配单，支持原厂订货
- 配单专家，FAE技术支持！
- 立即询价
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- BLF277
- 30690
- PHILIPS
- 2021+
- SMD
- 全新原装现货，全网最低，假一罚十
- 立即询价
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- BLF277
- 3500
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- 17+
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- 全新原装现货特价
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- BLF277
- 250
- PHILIPS
- 最新批号
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- 专营高频管模块，全新原装！
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- 60
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- TO-57
- 主营高频管
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- BLF277
- 250
- PHILIPS
- 14+
- 高频管
- 专营高频管模块，全新原装！
- 立即询价
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- BLF277
- 500
- PHILIPS
- 10+
- 高频管
- 专营高频管，全新原装现货
- 立即询价
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- BLF277
- 6000
- Philips
- 15+
- SMD
- 全新原装正品
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