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BLF184XRS
型号：BLF184XRS
厂商：NXP
批号：最新批号
封装：原厂封装
PDF下载
BLF3G22-30
UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
BLF4G10-160
UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130
UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
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- 代理商
- 型号
- 数量
- 厂商
- 批号
- 封装
- 交易说明
- 询价
- QQ
-
北京耐芯威科技有限公司
010-62104931
- BLF184XRSU
-
- 原厂封装
- 16+/17+
- 10000
- 只做原装正品 欢迎洽谈 电话010-6210493..
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- 原厂原装，代理渠道，可开发票
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- 10000
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- 19+
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- 1807+
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- BLF184XRSU
- 26
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- BLF184XRSU
- 9600
- Ampleon USA Inc.██
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- 6500
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- 全新原装现货!假一赔十!
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- 6000
- NXP Semiconductors
- 1823+
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- BLF184XRSU
- 5000
- Ampleon
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- BLF184XRS
- 210000
- NXP
- 17+
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- 进口原装现货稳定供货可售样品支持实单
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- 7500
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- 9500
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-
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- 50000
- Ampleon USA Inc.
- 17+
- SOT1214B
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-
- BLF184XRS
- 5000
- NXP
- 23+
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-
- BLF184XRSU
- 29
- Ampleon USA Inc.
- 17+
- SOT-1214B
- 原装正品，授权分销商现货库存，价优，货期快
- 立即询价
-
- BLF184XRS
- 136000
- NXP
- 17+
- SMD
- 代理渠道现货，一站式技术支持
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