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BLF202
型号：BLF202
厂商：NXP
批号：10+
封装：原厂原封装
PDF下载
BLF3G22-30
UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
BLF4G10-160
UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130
UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
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相关代理商
- 代理商
- 型号
- 数量
- 厂商
- 批号
- 封装
- 交易说明
- 询价
- QQ
-
深圳市大源实业科技有限公司
15302619915
- BLF2022-120
- 2600
- N/A
- 22+
- N/A
- 原装，公司部分现货，有单来谈QQ:16115312..
- 立即询价
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北京元坤伟业科技有限公司
010-62104931
- BLF202
- 5000
- PHILIPS
- 0107+
- 绝对公司现货库存热卖
- 假一罚十，百分百原装正品，质量保障
- 立即询价
-
广东济德精密电子有限公司
13288088530
- BLF2022+2LM37R2400A
- 2000
- YAGEO
- 近两年
- NA
- 查货可到京北通宇商城www.jbchip.com
- 立即询价
-
北京元坤伟业科技有限公司
010-62104931
- BLF202 T/R
- 3000
- NXP Semiconductors
- 07+
- 标准封装
- 全新原装100%正品保证质量
- 立即询价
-
北京元坤伟业科技有限公司
010-62104931
- BLF202 T/R
- 3000
- NXP Semiconductors
- 07+
- 标准封装
- 全新原装100%正品保证质量
- 立即询价
-
深圳市毅创辉电子科技有限公司
19129911934（手机优先微信同号）
- BLF202T/R
- 2300
- NXP
- 13+
- ROHS
- 全新原装正品 欢迎来电0755-82865099
- 立即询价
-
- BLF202
- 2500
- PHILIPS
- 01+
- 高频管
- 全新原装现货库存价格优势，同时回收原装物料
- 立即询价
-
- BLF2022-120 优势
- 23480
- NXP
- 全新环保批次
- 原厂原封
-
- 立即询价
-
- BLF202
- 6500
- NXP
- 16+
- SMD
- 全新原装现货!假一赔十!
- 立即询价
-
- BLF202
- 12500
- NXP★★特价优势热卖★★
- 16+★★进口原装★
- SOT-49A
- 100%全新原装现货热卖中★免费提供样板和技术支持
- 立即询价