收藏本站
BLF188XRU

型号：BLF188XRU

厂商：NXP

批号：1645+

封装：原厂原装

PDF下载
BLF3G22-30 UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
BLF4G10-160 UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130 UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
相关PDF

BLF2012LM37R2400A

BLF202

BLF202,115

BLF202T/R

BLF2043

BLF2043,112

BLF2043,135

BLF2043F

BLF2043F,112

BLF2043F,135

相关代理商

BLF2043F/T3

BLF2045

BLF2045,112

BLF2324M8LS200PJ

BLF2324M8LS200PU

BLF242

BLF242,112

BLF2425M6L180P

BLF2425M6L180P,112

BLF2425M6L180P,118

代理商
型号
数量
厂商
批号
封装
交易说明
询价
QQ

  • BLF188XRU
  • 752
  • Ampleon USA Inc.
  • 17+
  • SOT539A
  • 原装正品，授权分销商现货库存，价优，货期快 
  • 立即询价

  • BLF188XRU
  • 40000
  • 代理现货，可申请特价！
  • 18+
  • NA
  • 代理现货，可申请特价！ 
  • 立即询价

  • BLF188XRU
  • 25500
  • Ampleon
  • 2016+
  • 20
  • 代理型号原装大量现货 
  • 立即询价

  • BLF188XRU
  • 9852
  • AMPLEON
  • 1844+
  • LPR503AL
  • 只要网上有上百分百有货！只做进口原装正品！我们承若.. 
  • 立即询价

  • BLF188XRU
  • 13200
  • NXP
  • 1810+
  • 假一赔十
  • ★一级分销★原厂原装现货★免费技术支持★假一罚十★ 
  • 立即询价

  • BLF188XRU
  • 15000
  • NXP
  • 22+
  • SOT539A
  • 十年专营，供应原装正品！热卖现货！ 
  • 立即询价

  • BLF188XRU
  • 7500
  • Ampleon USA Inc.
  • 2022
  • SOT539A
  • 原装正品假一罚十 
  • 立即询价

  • BLF188XRU
  • 109
  • AMP
  • (香港沃成电子)
  • tel: 86-755-84503260
  • 原装正品 良心服务 
  • 立即询价

  • BLF188XRU
  • 5000
  • Ampleon
  • NEW
  • SOT539A
  • 代理现货，可订期货， 
  • 立即询价
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*