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BLF1820E-
型号：BLF1820E-
厂商：N/A
批号：22+
封装：N/A
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BLF3G22-30
UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
BLF4G10-160
UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130
UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
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-
深圳市大源实业科技有限公司
15302619915
- BLF1820E-70
- 2600
- N/A
- 22+
- N/A
- 原装，公司部分现货，有单来谈QQ:16115312..
- 立即询价
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深圳市毅创辉电子科技有限公司
19129911934（手机优先微信同号）
- BLF1820E-90
- 2300
- NXP
- 13+
- ROHS
- 全新原装正品 欢迎来电0755-82865099
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- BLF1820E-70
- 500
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- 16+
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航亿捷科技有限公司
13714898947
- BLF1820E-70
- 72
- /
- 18+
- PHILIPS/飞利浦
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- BLF1820E-90
- 14231
- INFINEON
- 2016+
- MODL
- 原装现货，大量现货库存，绝对正品
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- BLF1820E-90 现货
- 6800
- PHILIPS
- 2022+原装环保
- TO-63
- BOM配单专家，发货快、价格低
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- BLF1820E-90 优势
- 18
- PHI
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- 散
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- ★全新原装百分百现货！
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- BLF1820E-90
- 10000
- NXP恩智浦
- 17+
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- 优质货源工厂客户提供样品测试，运费到付。提供原装正..
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- BLF1820E-90
- 200
- PHILIPS
- 18+
- SOT502A
- 进口原装！现货热卖！欢迎来电咨询！！
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- BLF1820E-90
- 36
- PHI
- N/A
- TO-62
- 原装面谈
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- BLF1820E-70
- 600
- PHILIPS
- 17+
- 高频管
- 专营高频管模块
- 立即询价
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- BLF1820E-90
- 9865
- INFINEON
- 17+
- MODL
- 全新原装进口价格优势欢迎来电
- 立即询价