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BLF145,112
型号：BLF145,112
厂商：PHI
批号：14+
封装：原厂标准封装
PDF下载
BLF3G22-30
UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
BLF4G10-160
UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130
UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
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- 型号
- 数量
- 厂商
- 批号
- 封装
- 交易说明
- 询价
- QQ
-
北京元坤伟业科技有限公司
010-62104931
- BLF145,112
- 20000
- PHI
- 14+
- 原厂标准封装
- 全新原装，进口现货，准时交货，量大优惠
- 立即询价
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深圳市毅创辉电子科技有限公司
19129911934（手机优先微信同号）
- BLF145,112
- 2300
- NXP
- 13+
- ROHS
- 全新原装正品 欢迎来电0755-82865099
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深圳市桂鹏科技有限公司
0755-82810298
- BLF145,112
- 82810298
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- 15+
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- 深圳现货★原厂品质★提供PCB板配单业务
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- BLF145,112
- 105
- NXP
- 19+
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- 原装正品现货，一站式终端物料配单
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- BLF145,112
- 9600
- Ampleon USA Inc.██
- ██1809+█正品
- SOT-123A
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- BLF145,112
- 10000
- NXP
- 17+
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- BLF145,112
- 10000
- NXP
- 17+
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- 原装库存，详情电讯
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- 1680
- NXP
- 2018+
- SMD
- NXP专营品牌进口原装现货假一赔十
- 立即询价
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- BLF145,112
- 1680
- NXP
- 2018+
- SMD
- NXP专营品牌进口原装现货假一赔十
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- BLF145,112
- 50000
- Ampleon USA Inc.
- 17+
- SOT-123A
- 全新原装现货
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- BLF145,112
- 1680
- NXP
- 2018+
- SMD
- NXP专营品牌进口原装现货假一赔十
- 立即询价
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- BLF145,112
- 9000
- NXP
- 19+
- 原厂封装
- 只做原装正品假一赔十为客户做到零风险
- 立即询价
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- BLF145,112
- 10000
- NXP
- 17+
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- 优质货源工厂客户提供样品测试，运费到付。提供原装正..
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- BLF145,112
- 23000
- PHILIPS
- 14+
- SOT123
- 全新原装
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-
- BLF145,112
- 6321
- NXP Semiconductors
- 13+
- N/A
- 授权分销商现货库存
- 立即询价
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- BLF145,112
- 30000
- NXP
- 09+
- 原厂原封装
- 原装正品深圳现货热卖
- 立即询价
-
- BLF145,112
- 40
- NXP
- 2014+
- QFP
- 进口原装现货特价销售/欢迎来电/可以开%17发票
- 立即询价
-
- BLF145,112
- 7500
- Ampleon USA Inc.
- 2022
- SOT-123A
- 原装正品假一罚十
- 立即询价
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- BLF145,112
- 1839
- 原厂
- 13+
- 原厂封装
- 全新进口正品原装
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