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BLF177CR

型号：BLF177CR

厂商：Ampleon USA Inc.

批号：17+

封装：CRFM4

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BLF3G22-30 UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
BLF4G10-160 UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130 UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
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代理商
型号
数量
厂商
批号
封装
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询价
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  • BLF177CR
  • 30690
  • NXP
  • 2021+
  • TO-59
  • 全新原装现货，全网最低，假一罚十 
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  • BLF177CR
  • 360
  • NXP
  • 0821+
  • TO-59
  • 要货请先交代备货 
  • 立即询价

  • BLF177CR
  •  
  • NXP/恩智浦
  • 18+
  • SMD
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  • 立即询价

  • BLF177CR
  • 25634
  • NXP
  • 最新批次
  • SMD
  • 原装正品，价格超越代理，可提供原厂出货证明！ 
  • 立即询价

  • BLF177CR
  • 5000
  • NXP/恩智浦
  • 19+
  • TO-59
  • 十年专营，供应原装正品！热卖现货！ 
  • 立即询价

  • BLF177CR
  • 12245
  • NXP/恩智浦
  • 22+
  • TO-59
  • 现货，原厂原装假一罚十！ 
  • 立即询价

  • BLF177CR
  • 6500
  • NXP
  • 16+
  • SMD
  • 全新原装现货!假一赔十! 
  • 立即询价

  • BLF177CR
  • 5000
  • NXP/恩智浦
  • 22+
  • TO-59
  • 十年专营，供应原装正品！热卖现货！ 
  • 立即询价

  • BLF177CR
  • 89650
  • NXP
  • 17+
  • TO-59
  • 原装现货，一级代理分销商 
  • 立即询价
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