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BLF174XR,112
型号：BLF174XR,112
厂商：NXP/恩智浦
批号：最新批次
封装：原厂封装
PDF下载
BLF3G22-30
UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
BLF4G10-160
UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130
UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
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- 代理商
- 型号
- 数量
- 厂商
- 批号
- 封装
- 交易说明
- 询价
- QQ
-
北京耐芯威科技有限公司
010-62104931
- BLF174XR,112
-
- 原厂封装
- 16+/17+
- 10000
- 只做原装正品 欢迎洽谈 电话010-6210493..
- 立即询价
-
林沃田信息技术(深圳)有限公司
0755-82781160
- BLF174XR,112
- 60510
- Ampleon USA Inc.
- 22+
- RF FET LDMOS 110V 28
-
- 立即询价
-
深圳市鹏威尔科技有限公司
13138879988
- BLF174XR,112
- 13
- AMP
- 16+
- ORIGONAL
- 121.50342 USD,szpoweric.c..
- 立即询价
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- BLF174XR,112 现货
- 100
- AMMPLEON
- 20+
- SOT-1214A
- 买原装正品，找艾睿创芯 价格优势 现货库存
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-
- BLF174XR,112
- 20000
- Ampleon USA Inc.
- 22+
- SOT1214A
- 主营原装进口物料，真诚为您服务
- 立即询价
-
- BLF174XR,112
- 10000
- NXP
- 17+
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- 原装库存，可提供样品，电询13556812296
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- BLF174XR,112
- 10000
- NXP
- 17+
-
- 原装库存，详情电讯
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-
- BLF174XR,112
- 1680
- NXP
- 2018+
- SMD
- NXP专营品牌进口原装现货假一赔十
- 立即询价
-
- BLF174XR,112
- 1680
- NXP
- 2018+
- SMD
- NXP专营品牌进口原装现货假一赔十
- 立即询价
-
- BLF174XR,112
- 50000
- Ampleon USA Inc.
- 17+
- SOT1214A
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-
- BLF174XR,112
- 1680
- NXP
- 2018+
- SMD
- NXP专营品牌进口原装现货假一赔十
- 立即询价
-
- BLF174XR,112
-
- 15+
- SMDQFN
- 205
- 微波射频元件原装正品假一赔百找散新翻新料
- 立即询价
-
- BLF174XR,112
- 47
- Ampleon USA Inc.
- 17+
- SOT-1214A
- 原装正品，授权分销商现货库存，价优，货期快
- 立即询价
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- BLF174XR,112
- 25500
- AMP
- 2016+
- 20
- 代理型号原装大量现货
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- BLF174XR,112
- 60
- 8~12 weeks
- 14+
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- 原装现货/价格优势
- 立即询价
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- BLF174XR,112
- 5000
- Ampleon
- NEW
- SOT1214A
- 代理现货，可订期货，
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- BLF174XR,112
- 20
- SBH
- 17+
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- 订货1-2周 13480778437
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