-
[北京]010-87982920
-
[深圳]0755-82701186
- 您现在的位置：PDF下载目录 > BLF10M6200U PDF下载、代理商、价格
BLF10M6200U
型号：BLF10M6200U
厂商：Ampleon USA Inc.
批号：22+
封装：RF FET LDMOS 65V 20D
PDF下载
BLF3G22-30
UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
BLF4G10-160
UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130
UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
相关PDF
相关代理商
- 代理商
- 型号
- 数量
- 厂商
- 批号
- 封装
- 交易说明
- 询价
- QQ
-
- BLF10M6200U
- 10000
- NXP
- 17+
-
- 优质货源工厂客户提供样品测试，运费到付。提供原装正..
- 立即询价
-
- BLF10M6200U
- 10000
- NXP
- 19+
- N/A
- 原装进口订货
- 立即询价
-
- BLF10M6200U
- 26
- AMPLEON
- 1908+
- LDMOST
- ￥1190.元-体验愉快问购元件-就找我吧！★
- 立即询价
-
- BLF10M6200U
- 9600
- Ampleon USA Inc.██
- ██1809+█正品
- SOT502A
- 一级分销商，支持原厂订货，优势热卖███
- 立即询价
-
- BLF10M6200U
- 10000
- NXP
- 17+
-
- 原装库存，可提供样品，电询13556812296
- 立即询价
-
- BLF10M6200U
- 10000
- NXP
- 17+
-
- 原装库存，详情电讯
- 立即询价
-
- BLF10M6200U
- 1680
- NXP
- 2018+
- SMD
- NXP专营品牌进口原装现货假一赔十
- 立即询价
-
- BLF10M6200U
- 1680
- NXP
- 2018+
- SMD
- NXP专营品牌进口原装现货假一赔十
- 立即询价
-
- BLF10M6200U
- 50000
- Ampleon USA Inc.
- 17+
- SOT502A
- 全新原装现货
- 立即询价
-
- BLF10M6200U
- 1680
- NXP
- 2018+
- SMD
- NXP专营品牌进口原装现货假一赔十
- 立即询价
-
- BLF10M6200U
- 781000
- NXP
- 18+
- 原厂封装
- 百分之百原装进口现货
- 立即询价
-
- BLF10M6200U
- 16200
- NXP
- 1814+
- 假一赔十
- ★一级分销★原厂原装现货★免费技术支持★假一罚十★
- 立即询价