收藏本站
BLF10H6600PU

型号：BLF10H6600PU

厂商：NXP

批号：18+

封装：

PDF下载
BLF3G22-30 UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
BLF4G10-160 UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130 UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
相关PDF

BLF10M6135U

BLF10M6160U

BLF10M6200U

BLF10M6LS135U

BLF10M6LS160U

BLF10M6LS200U

BLF145

BLF145,112

BLF147

BLF147,112

相关代理商

BLF174XR,112

BLF174XRS,112

BLF175

BLF175,112

BLF177

BLF177,112

BLF177C

BLF177CR

BLF177CR,112

BLF178P

代理商
型号
数量
厂商
批号
封装
交易说明
询价
QQ

  • BLF10H6600PU
  • 6000
  • NXP Semiconductors
  • 1823+
  • 原厂原封
  • 十年信誉，只做原装，真实库存 
  • 立即询价

  • BLF10H6600PU
  • 10000
  • NXP
  • 19+
  • N/A
  • 原装进口订货 
  • 立即询价

  • BLF10H6600PU
  • 26
  • AMPLEON
  • 1908+
  • SOT-539
  • ￥2768.元-体验愉快问购元件-就找我吧！★ 
  • 立即询价

  • BLF10H6600PU
  • 9600
  • Ampleon USA Inc.██
  • ██1809+█正品
  • SOT539A
  • 一级分销商，支持原厂订货，优势热卖███ 
  • 立即询价

  • BLF10H6600PU
  • 50000
  • Ampleon USA Inc.
  • 17+
  • SOT539A
  • 全新原装现货 
  • 立即询价

  • BLF10H6600PU
  •  
  • 15+
  • SMDQFN
  • 205
  • 微波射频元件原装正品假一赔百找散新翻新料 
  • 立即询价

  • BLF10H6600PU
  • 5000
  • Ampleon
  • NEW
  • SOT539A
  • 代理现货，可订期货， 
  • 立即询价

  • BLF10H6600PU
  • 7500
  • Ampleon USA Inc.
  • 2022
  • SOT539A
  • 原装正品假一罚十 
  • 立即询价

  • BLF10H6600PU
  • 965
  • NXP SEMIC
  • 1725+
  • TEL 83234978
  • 现货/可订期货0755-83234978 
  • 立即询价
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*