-
[北京]010-87982920
-
[深圳]0755-82701186
- 您现在的位置：PDF下载目录 > BLF0810-180 PDF下载、代理商、价格
BLF0810-180
型号：BLF0810-180
厂商：NXP
批号：最新批号
封装：原厂封装
PDF下载
BLF3G22-30
UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
BLF4G10-160
UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130
UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
相关PDF
相关代理商
- 代理商
- 型号
- 数量
- 厂商
- 批号
- 封装
- 交易说明
- 询价
- QQ
-
深圳市大源实业科技有限公司
15302619915
- BLF0810-180
- 2600
- N/A
- 24+
- N/A
- 原装，公司部分现货，有单来谈QQ:16115312..
- 立即询价
-
- BLF0810-180
- 136000
- NXP
- 17+
- SMD
- 代理渠道现货，一站式技术支持
- 立即询价
-
- BLF0810-180
- 40000
- 代理现货，可申请特价！
- 18+
- SOT502A
- 代理现货，可申请特价！
- 立即询价
-
- BLF0810-180
- 20000
- NXP/恩智浦
- 23+
- SMD
- 原装正品 欢迎咨询
- 立即询价
-
- BLF0810-180
- 20000
- NXP/恩智浦
- 23+
- SMD
- 原装正品 欢迎咨询
- 立即询价
-
- BLF0810-180
- 20436
- NXP
- 1835+
- SMD
- 全新原装正品现货库存
- 立即询价
-
- BLF0810-180
- 854533
- PHILIPS/飞利浦
- 22+
- TO-59
-
- 立即询价
-
- BLF0810-180
- 9500
- NXP
- 17+
- SMD
- 进口原装公司现货！原装正品价格优势
- 立即询价
-
- BLF0810-180
- 86720
- PHILIPPINES
- 22+
- SOT502A
- 代理授权原装正品价格最实惠，假一赔百
- 立即询价
-
- BLF0810-180
- 6500
- NXP
- 16+
- SMD
- 全新原装现货!假一赔十!
- 立即询价
-
- BLF0810-180
- 210000
- NXP
- 17+
-
- 进口原装现货稳定供货可售样品支持实单
- 立即询价