型号：CGC8814
厂商：INTEL
批号：22+
封装：DIP40
CGD1040HI
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 VDC. Employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
CGD1042H
Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
CGD1042HI
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
CGD1044H
Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero junction Field-Effect Transistor (HFET) GaAs dies.
CGD1044HI
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
CGD1046HI
1 GHz, 27 dB gain GaAs high output power doubler
CGD942C
Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field-Effect Transistor (HFET) GaAs dies.
CGD944C
Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field Effect Transistor (HFET) GaAs dies.
CGD982HCI
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
CGD985HCI
1 GHz, 25 dB gain GaAs high output power doubler
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