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CGD1042

型号：CGD1042

厂商：NXP

批号：0938+

封装：SOT115

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CGD1042H Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
CGD1042HI Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
CGD1044H Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero junction Field-Effect Transistor (HFET) GaAs dies.
CGD1044HI Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
CGD1046HI 1 GHz, 27 dB gain GaAs high output power doubler
CGD942C Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field-Effect Transistor (HFET) GaAs dies.
CGD944C Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field Effect Transistor (HFET) GaAs dies.
CGD982HCI Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
CGD985HCI 1 GHz, 25 dB gain GaAs high output power doubler
CGD987HCI Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
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