BLF647P112

型号:BLF647P112

厂商:NXP

批号:最新批号

封装:TEJIA

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BLF6G10LS-200 Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
BLF6G10LS-200R Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 869 - 894 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
BLF820 (6609207-2) TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
BLF872 UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
BLFA054MGCK-12V 5mm FLANGE BASED LED LAMP
BLFA054MGCK-28V 5mm FLANGE BASED LED LAMP
BLFA054MGCK-6V 5mm FLANGE BASED LED LAMP
BLFA054SECK-12V 5mm FLANGE BASED LED LAMP
BLFA054SECK-28V 5mm FLANGE BASED LED LAMP
BLFA054SECK-6V 5mm FLANGE BASED LED LAMP
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  • BLF647P112
  • 42
  • Ampleon
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  • BLF647P112
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  • BLF647P112
  • 200
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  • 40
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  • BLF647P112
  • 5000
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