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BLF6G10-135RN,112
型号:BLF6G10-135RN,112
厂商:NXP
批号:18+
封装:
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BLF6G10LS-200
Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
BLF6G10LS-200R
Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 869 - 894 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
BLF872
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
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- 型号
- 数量
- 厂商
- 批号
- 封装
- 交易说明
- 询价
- QQ
-
- BLF6G10-135RN,112
- 9600
- Ampleon USA Inc.██
- ██1809+█正品
- LDMOST
- 一级分销商,支持原厂订货,优势热卖███
- 立即询价
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- BLF6G10-135RN,112
- 50000
- Ampleon USA Inc.
- 17+
- LDMOST
- 全新原装现货
- 立即询价
-
- BLF6G10-135RN,112
- 8827
- NXP Semiconductors
- 13+
- N/A
- 授权分销商现货库存
- 立即询价
-
- BLF6G10-135RN,112
- 7500
- Ampleon USA Inc.
- 2022
- SOT502A
- 原装正品假一罚十
- 立即询价