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BLF647A,112
型号:BLF647A,112
厂商:NXP
批号:18+
封装:
PDF下载
BLF6G10LS-200
Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
BLF6G10LS-200R
Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 869 - 894 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
BLF872
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
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- 封装
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- QQ
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- BLF647A,112
- 10000
- NXP
- 17+
-
- 原装库存,可提供样品,电询13556812296
- 立即询价
-
- BLF647A,112
- 10000
- NXP
- 17+
-
- 原装库存,详情电讯
- 立即询价
-
- BLF647A,112
- 1680
- NXP
- 2018+
- SMD
- NXP专营品牌进口原装现货假一赔十
- 立即询价
-
- BLF647A,112
- 1680
- NXP
- 2018+
- SMD
- NXP专营品牌进口原装现货假一赔十
- 立即询价
-
- BLF647A,112
- 1680
- NXP
- 2018+
- SMD
- NXP专营品牌进口原装现货假一赔十
- 立即询价
-
- BLF647A,112
-
- 15+
- SMDQFN
- 205
- 微波射频元件原装正品假一赔百找散新翻新料
- 立即询价
-
- BLF647A,112
- 10000
- NXP
- 17+
-
- 优质货源工厂客户提供样品测试,运费到付。提供原装正..
- 立即询价