BLF4G08LS-160A

型号:BLF4G08LS-160A

厂商:PHILIPS/飞利浦

批号:24+

封装:

PDF下载
BLF4G10-160 UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130 UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF6.25 FAST BLOW ELECTRIC FUSE, 6.25A, 250VAC, 10000A (IR), INLINE/HOLDER
相关PDF
相关代理商
代理商
型号
数量
厂商
批号
封装
交易说明
询价
QQ
  • BLF4G08LS-160A
  • 2000
  • PHILIPS/飞利浦
  • 22+
  • 专营高频管
  • 专营高频管质量保证 
  • 立即询价
  • BLF4G08LS-160A
  • 68900
  • PHILPS
  • 22+
  • NA
  • 原装正品现货,?支持检测 
  • 立即询价
  • BLF4G08LS-160A
  • 854533
  • PHILIPS/飞利浦
  • 22+
  • TO-59
  •  
  • 立即询价
  • BLF4G08LS-160A
  • 8000
  • PHILPS
  • 17+
  • NA
  • 全新原装正品无铅 
  • 立即询价
  • BLF4G08LS-160A
  • 255
  • PH
  • 16+
  • HDX
  • 全新原装库存现货热卖 
  • 立即询价
  • BLF4G08LS-160A
  • 40000
  • 代理现货,可申请特价!
  • 18+
  • 深圳仓现货,欢迎询价!
  • 代理现货,可申请特价! 
  • 立即询价
  • BLF4G08LS-160A
  • 10680
  • PHILPS
  • 2021+
  • NA
  • 全新原装现货,全网最低,假一罚十 
  • 立即询价
  • BLF4G08LS-160A
  • 136
  • PHILIPS
  •  
  •  
  • 主营高频管 
  • 立即询价