收藏本站
BLF4G10LS-120

型号：BLF4G10LS-120

厂商：ANGILEN

批号：22+

封装：N/A

PDF下载
BLF4G10LS-160 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130 UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF6.25 FAST BLOW ELECTRIC FUSE, 6.25A, 250VAC, 10000A (IR), INLINE/HOLDER
BLF6G10LS-200 Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
相关PDF

BLF4G10LS-120,112

BLF4G10LS-160

BLF4G10LS-160,112

BLF4G20-110B

BLF4G20-110B,112

BLF4G20LS-110B

BLF4G20LS-110B,112

BLF4G20LS-130

BLF4G20LS-130,112

BLF4G20S-110B

相关代理商

BLF4G20S-110B,112

BLF4G22LS-130

BLF4G22LS-130,112

BLF4G22S-100

BLF4G22S-100,112

BLF521

BLF521,112

BLF542

BLF542,112

BLF544

代理商
型号
数量
厂商
批号
封装
交易说明
询价
QQ

  • BLF4G10LS-120
  • 46352
  • PHILIPS
  • 16+
  •  
  • 原装大量现货特价出售可开17点增值票 
  • 立即询价

  • BLF4G10LS-120
  • 1638
  • PHILIPS
  • 17+
  • SOT502B
  • 诚信经营。原装有部分现货！ 
  • 立即询价

  • BLF4G10LS-120
  • 400
  • PHILIPS
  •  
  • 标准封装
  • 进口原装订货 特价销售！ 
  • 立即询价

  • BLF4G10LS-120
  • 38
  • NXP
  • 17+
  • NA
  • 100%原装正品现货，库位：深圳 
  • 立即询价

  • BLF4G10LS-120,112
  • 1000
  • NXP USA Inc.
  • 20+
  • 原厂封装
  • 原装正品，专注原装正品十五年 
  • 立即询价

  • BLF4G10LS-120
  • 65850
  • PHILIPS
  • 12+
  • SOT502B
  • 原装进口正品/特价处理/专业电子产品配套服务 
  • 立即询价

  • BLF4G10LS-120,112
  • 8651
  • NXP USA Inc.
  • 18+
  • FET RF 65V 960MHZ SO
  • 原装正品，现货库，刘小姐18205346238 
  • 立即询价

  • BLF4G10LS-120
  • 10000
  • motorola
  • 17+
  •  
  • 优质货源工厂客户提供样品测试，运费到付。提供原装正.. 
  • 立即询价
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*