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BLF3G21-6@112

型号：BLF3G21-6@112

厂商：NXP

批号：最新批次

封装：SOT538A

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BLF3G22-30 UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
BLF4G10-160 UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130 UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
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  • BLF3G21-6@112
  • 6000
  • NXP
  • 2021+
  • SOT538A
  • 原装现货，优势出 
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  • BLF3G21-6@112
  • 865000
  • NXP
  • 18+
  • SOT538A
  • 代理渠道,原装公司现货 
  • 立即询价

  • BLF3G21-6@112
  • 4087
  • NXP
  • 17+
  • SOT538A
  • 只做原装,诚信经营 终端工厂免费送样 
  • 立即询价

  • BLF3G21-6@112
  • 4087
  • NXP
  • 16年新品
  • SOT538A
  • 咨询我们吧，有原装现货，同时回收原装物料 
  • 立即询价

  • BLF3G21-6@112
  • 4087
  • NXP
  • 16年新品
  • SOT538A
  • 咨询我们吧，有原装现货，同时回收原装物料 
  • 立即询价

  • BLF3G21-6@112
  • 36000
  • NXP
  • 16+
  • SOT538
  • 全新原装现货 
  • 立即询价

  • BLF3G21-6@112
  • 18800
  • 原厂封装
  • 2016+
  • SOT538A
  • 进口全新原装公司大量现货 
  • 立即询价

  • BLF3G21-6@112
  • 18800
  • 原厂封装
  • 2016+
  • SOT538A
  • 进口全新原装公司大量现货 
  • 立即询价

  • BLF3G21-6@112
  • 25634
  • NXP
  • 最新批次
  • SOT538A
  • 原装正品，价格超越代理，可提供原厂出货证明！ 
  • 立即询价

  • BLF3G21-6@112
  • 68000
  • NXP
  • 15+
  • SOT538A
  • 全新原装现货!假一赔十! 
  • 立即询价
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