SIS890DN-T1-GE3

型号:SIS890DN-T1-GE3

厂商:Vishay(威世)

批号:22+

封装:PowerPAK 1212-8

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SIS892ADN-T1-GE3 MOSFET N-CH 100V D-S PPAK 1212
SIS902DN-T1-GE3 MOSFET N-CH D-S 75V 1212-8 PPAK
SISA10DN-T1-GE3 MOSFET N-CH 30V 30A 1212-8
SISC3.2N05E 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
SISC3.2N20D 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
SISC3.2P20E 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
SISCDRH125M-181 1 ELEMENT, 180 uH, GENERAL PURPOSE INDUCTOR, SMD
SISCDRH125M-221 1 ELEMENT, 220 uH, GENERAL PURPOSE INDUCTOR, SMD
SISCDRH125M-680 1 ELEMENT, 68 uH, GENERAL PURPOSE INDUCTOR, SMD
SISCDRH125N-5R8R 1 ELEMENT, 5.8 uH, GENERAL PURPOSE INDUCTOR, SMD
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  • SIS890DN-T1-GE3
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  • 立即询价
  • SIS890DN-T1-GE3 优势
  • 300000
  • VISHAY(威世)
  • 1735+
  • 3.3x3.3mm
  • 买二三极管-尽在三芯网 
  • 立即询价
  • SIS890DN-T1-GE3 优势
  • 300000
  • VISHAY(威世)
  • 1735+
  • 3.3x3.3mm
  • 买二三极管 尽在三芯网 
  • 立即询价
  • SIS890DN-T1-GE3 优势
  • 400000
  • VISHAY
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