MGV1205R33M-10

型号:MGV1205R33M-10

厂商:Laird

批号:2020+

封装:SMD

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MGV125-08 KA BAND, 0.3 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
MGV125-08-E28 KA BAND, 0.38 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
MGV125-08-E28X KA BAND, 0.38 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
MGV125-08H20 KA BAND, 0.48 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
MGV125-08-P55 KA BAND, 0.43 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
MGV125-09 KA BAND, 0.4 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
MGV125-09-0805-2 KA BAND, 0.46 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
MGV125-09-E28X KA BAND, 0.48 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
MGV125-20 KA BAND, 0.5 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
MGV125-20-E28 KA BAND, 0.58 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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