型号：IRGTI0100M12
厂商：Vishay Semiconductors
批号：23+
封装：标准封装
IRGVH50FUPBF
45 A, 1200 V, N-CHANNEL IGBT, TO-258AA
IRH3054
RADIATION HARDENED POWER MOSFET THRU-HOLE
IRH4054
RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHF597130
6.7 A, 100 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRHF7110SCV
3.5 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRHM2C50SE
10 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
IRHM2C50SEDPBF
10.4 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
IRHM2C50SEUPBF
10.4 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
IRHM57064SCS
35 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
IRHM7250SEU
26 A, 200 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET
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