型号：IRF636A
厂商：IR
批号：2024+
封装：TO-220
IRF640
Power Field Effect Transistor (N-Channel Enhancement-Mode Silicon Gate)(功率场效应管（N沟道增强型硅门）)
IRF640AJ
18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF640N
MOSFET N-CH 200V 18A TO-220AB
IRF640NL
MOSFET N-CH 200V 18A TO-262
IRF640S
18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
IRF641
18 A, 150 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF641-004
18 A, 150 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
IRF641-010
18 A, 150 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
IRF641-011
18 A, 150 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
IRF641-013
18 A, 150 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
0755-83946385
19129491934(手机优先微信同号)
010-62104791