-
北京元坤伟业科技有限公司
010-62104931
- CGD1042H112
- 3000
- NXP
- 10+
- 原装
- 全新原装100%正品保证质量
- 立即询价
-
北京元坤伟业科技有限公司
010-62104931
- CGD1042H112
- 3000
- NXP
- 10+
- 原装
- 全新原装100%正品保证质量
- 立即询价
-
深圳市柏新电子科技有限公司
0755-88377780
- CGD1042H112
- 90
- PHI
- 2012+
- 只做原装正品
- 立即询价
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CGD1042H112
型号：CGD1042H112
厂商：NXP
批号：10+
封装：原装
PDF下载
CGD1042HI
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
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Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero junction Field-Effect Transistor (HFET) GaAs dies.
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Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
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Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field-Effect Transistor (HFET) GaAs dies.
CGD944C
Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field Effect Transistor (HFET) GaAs dies.
CGD982HCI
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
CGD985HCI
1 GHz, 25 dB gain GaAs high output power doubler
CGD987HCI
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
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