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BLF6G10LS-160112
型号:BLF6G10LS-160112
厂商:NXP
批号:1816+
封装:假一赔十
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BLF6G10LS-200
Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
BLF6G10LS-200R
Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 869 - 894 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
BLF872
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
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- BLF6G10LS-160112
- 13660
- NXP
- 1816+
- 假一赔十
- ★一级分销★原厂原装现货★免费技术支持★假一罚十★
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