型号：BLF6G10LS-135RN11
厂商：NXP Semiconductor
批号：1207
封装：N/A
BLF6G10LS-200
Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
BLF6G10LS-200R
Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 869 - 894 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
BLF820 (6609207-2)
TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
BLF872
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
BLFA054MGCK-12V
5mm FLANGE BASED LED LAMP
BLFA054MGCK-28V
5mm FLANGE BASED LED LAMP
BLFA054MGCK-6V
5mm FLANGE BASED LED LAMP
BLFA054SECK-12V
5mm FLANGE BASED LED LAMP
BLFA054SECK-28V
5mm FLANGE BASED LED LAMP
BLFA054SECK-6V
5mm FLANGE BASED LED LAMP