- BLF4G22-130
- 300
- NXP
- 16+
- SMD
- 原装正品假一赔万
- 立即询价
- BLF4G22-130
- 40000
- 代理现货，可申请特价！
- 18+
- 深圳仓现货，欢迎询价！
- 代理现货，可申请特价！
- 立即询价
- BLF4G22-130
- 130
- PHILIPPNES
- 主营高频管
- 立即询价
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BLF4G22-130
型号：BLF4G22-130
厂商：NXP
批号：16+
封装：SMD
PDF下载
BLF4G22-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130
UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF6.25
FAST BLOW ELECTRIC FUSE, 6.25A, 250VAC, 10000A (IR), INLINE/HOLDER
BLF6G10LS-200
Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
BLF6G10LS-200R
Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 869 - 894 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
BLF820 (6609207-2)
TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
BLF872
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
BLFA054MGCK-12V
5mm FLANGE BASED LED LAMP
BLFA054MGCK-28V
5mm FLANGE BASED LED LAMP
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