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BLF278C
型号：BLF278C
厂商：NXP
批号：22+
封装：SMD
PDF下载
BLF3G22-30
UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
BLF4G10-160
UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130
UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
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相关代理商
- 代理商
- 型号
- 数量
- 厂商
- 批号
- 封装
- 交易说明
- 询价
- QQ
-
深圳市毅创辉电子科技有限公司
19129491934(手机优先微信同号)
- BLF278C
- 3555
- PHILIPS
- 201320+
- ROHS
- 原装正品，现货库存。400-800-0307
- 立即询价
-
- BLF278C
- 854533
- PHILIPS/飞利浦
- 22+
- TO-59
-
- 立即询价
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- BLF278C
- 13
- NXP
- 1810+
- SOT262
- 原装现货,精专配套,正品BOM表报价
- 立即询价
-
- BLF278C
- 9
-
- 17+
- SMD
- 进口原装公司现货！原装正品价格优势
- 立即询价
-
- BLF278C
- 5690
- NXP
- 19+
- SOT262
- 原装进口，支持技术服务，提供样品
- 立即询价
-
- BLF278C
- 5690
- NXP
- 17+
- SOT262
- 原装进口零成本有接受价格就出
- 立即询价
-
- BLF278C
- 5000
- NXP
- 23+
-
- 全新原装正品价优
- 立即询价
-
- BLF278C
- 13
- NXP
- 1528+
- SOT262
- 原装现货，欢迎询价
- 立即询价
-
- BLF278C
- 136000
- NXP
- 17+
- SMD
- 代理渠道现货，一站式技术支持
- 立即询价
-
- BLF278C
- 40000
- 代理现货，可申请特价！
- 18+
- NA
- 代理现货，可申请特价！
- 立即询价
-
- BLF278C
- 30690
- AMPLEON
- 2021+
- SOT262
- 全新原装现货，全网最低，假一罚十
- 立即询价
-
- BLF278C
- 13
- NXP
- 1528+
- SOT262
-
- 立即询价
-
- BLF278C
- 86720
- NXP
- 22+
- SOT262
- 代理授权原装正品价格最实惠，假一赔百
- 立即询价
-
- BLF278C
- 6500
- NXP
- 16+
- SMD
- 全新原装现货!假一赔十!
- 立即询价
-
- BLF278C112
- 12500
- NXP Semiconductors
- 13+/14+
- 原厂封装！
- 原装正品！价优！优势货源放心订购！
- 立即询价
-
- BLF278C
- 18000
- AMPLEON
- 22+
- SOT262
- 原装正品，有挂有货，假一赔十
- 立即询价