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BLF245B112
型号：BLF245B112
厂商：NXP
批号：最新批号
封装：SOT279A
PDF下载
BLF3G22-30
UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
BLF4G10-160
UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130
UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
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- 代理商
- 型号
- 数量
- 厂商
- 批号
- 封装
- 交易说明
- 询价
- QQ
-
- BLF245B112 优势
- 1500
- Philips
- 1723+
- 代理
- 假一罚万，原厂原装有COC，长期有订货
- 立即询价
-
- BLF245B112
- 108114
- NXP/恩智浦
- 22+
- 18
- 代理渠道，原装正品，假一赔十。
- 立即询价
-
- BLF245B112
- 865000
- NXP
- 18+
- SOT279A
- 代理渠道,原装公司现货
- 立即询价
-
- BLF245B112
- 5690
- NXP
- 19+
- SOT279A
- 原装进口，支持技术服务，提供样品
- 立即询价
-
- BLF245B112
- 5690
- NXP
- 17+
- SOT279A
- 原装进口零成本有接受价格就出
- 立即询价
-
- BLF245B112
- 40000
- 代理现货，可申请特价！
- 18+
- NEW
- 代理现货，可申请特价！
- 立即询价
-
- BLF245B112
- 5014
- NXP
- █15+█
-
- █深圳现货原装正品█
- 立即询价
-
- BLF245B112
- 12800
- NXP
- 1802+
- 假一赔十
- ★一级分销★原厂原装现货★免费技术支持★假一罚十★
- 立即询价
-
- BLF245B112
- 12500
- NXP
- 16+★★进口原装★
- SOT-279A
- 100%全新原装现货热卖中★免费提供样板和技术支持
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