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BLF2425M8LS140U

型号：BLF2425M8LS140U

厂商：NXP

批号：18+

封装：

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BLF3G22-30 UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
BLF4G10-160 UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130 UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
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代理商
型号
数量
厂商
批号
封装
交易说明
询价
QQ

  • BLF2425M8LS140U
  • 6000
  • NXP Semiconductors
  • 1823+
  • 原厂原封
  • 十年信誉，只做原装，真实库存 
  • 立即询价

  • BLF2425M8LS140U
  • 10000
  • NXP
  • 19+
  • N/A
  • 原装进口订货 
  • 立即询价

  • BLF2425M8LS140U
  • 26
  • AMPLEON
  • 1908+
  • SOT-502
  • ￥1155.元-体验愉快问购元件-就找我吧！★ 
  • 立即询价

  • BLF2425M8LS140U
  • 9600
  • Ampleon USA Inc.██
  • ██1809+█正品
  • SOT502B
  • 一级分销商，支持原厂订货，优势热卖███ 
  • 立即询价

  • BLF2425M8LS140U
  • 50000
  • Ampleon USA Inc.
  • 17+
  • SOT502B
  • 全新原装现货 
  • 立即询价

  • BLF2425M8LS140U
  •  
  • 15+
  • SMDQFN
  • 205
  • 微波射频元件原装正品假一赔百找散新翻新料 
  • 立即询价

  • BLF2425M8LS140U
  • 34
  • Ampleon USA Inc.
  • 17+
  • SOT-502B
  • 原装正品，授权分销商现货库存，价优，货期快 
  • 立即询价

  • BLF2425M8LS140U
  • 81
  • AMPLEON
  • 已停产最后库存
  • SOT-502B
  • 晶体管，FET，MOSFET，射频 
  • 立即询价

  • BLF2425M8LS140U
  • 7500
  • Ampleon USA Inc.
  • 2022
  • SOT502B
  • 原装正品假一罚十 
  • 立即询价

  • BLF2425M8LS140U
  • 965
  • NXP SEMIC
  • 1725+
  • TEL 83234978
  • 现货/可订期货0755-83234978 
  • 立即询价
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