-
[北京]010-87982920
-
[深圳]0755-82701186
- 您现在的位置：PDF下载目录 > BLF242,112 PDF下载、代理商、价格
BLF242,112
型号：BLF242,112
厂商：NXP
批号：18+
封装：
PDF下载
BLF3G22-30
UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
BLF4G10-160
UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130
UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
相关PDF
相关代理商
- 代理商
- 型号
- 数量
- 厂商
- 批号
- 封装
- 交易说明
- 询价
- QQ
-
深圳市桂鹏科技有限公司
0755-82810298
- BLF242,112
- 82810298
-
- 15+
-
- 深圳现货★原厂品质★提供PCB板配单业务
- 立即询价
-
- BLF242,112
- 7
- NXP Semiconductors
- 18+
- PERICOM
- 全新原装正品
- 立即询价
-
- BLF242,112
- 103
- NXP
- 19+
-
- 原装正品现货，一站式终端物料配单
- 立即询价
-
- BLF242,112
- 9600
- Ampleon USA Inc.██
- ██1809+█正品
- CRFM4
- 一级分销商，支持原厂订货，优势热卖███
- 立即询价
-
- BLF242,112
- 50000
- Ampleon USA Inc.
- 17+
- CRFM4
- 全新原装现货
- 立即询价
-
- BLF242,112
- 9000
- NXP
- 19+
- 原厂封装
- 只做原装正品假一赔十为客户做到零风险
- 立即询价
-
- BLF242,112
- 32000
- PHILIPS
- 16+
- TO-59
- 原装现货
- 立即询价
-
- BLF242,112
- 6337
- NXP Semiconductors
- 13+
- N/A
- 授权分销商现货库存，价优，货期快
- 立即询价
-
- BLF242,112
- 30000
- NXP
- 09+
- 原厂原封装
- 原装正品深圳现货热卖
- 立即询价
-
- BLF242,112
- 6300
- NXP
- 16+
- SOT123A
- 原装现货 特价热卖 长期供应 可开税票
- 立即询价
-
- BLF242,112
- 7500
- Ampleon USA Inc.
- 2022
- CRFM4
- 原装正品假一罚十
- 立即询价
-
- BLF242,112
- 1839
- 原厂
- 13+
- 原厂封装
- 全新进口正品原装
- 立即询价