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BLF2022-70
型号：BLF2022-70
厂商：PHI
批号：23+
封装：02+
PDF下载
BLF3G22-30
UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
BLF4G10-160
UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130
UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
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相关代理商
- 代理商
- 型号
- 数量
- 厂商
- 批号
- 封装
- 交易说明
- 询价
- QQ
-
深圳市大源实业科技有限公司
15302619915
- BLF2022-70
- 2600
- HP
- 22+
- N/A
- 原装，公司部分现货，有单来谈QQ:16115312..
- 立即询价
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- BLF2022-70
- 68900
- PHI
- 22+
- 02+
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- BLF2022-70
- 66890
- PHI
- 22+
- 02+
- 授权代理直销,原厂原装现货,假一罚十,特价销售
- 立即询价
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- BLF2022-70
- 66890
- PHI
- 22+
- 02+
- 授权代理直销,原厂原装现货,假一罚十,特价销售
- 立即询价
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- BLF2022-70
- 20
- PHI
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- 02+
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- 立即询价
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- BLF2022-70
- 5020
- PHILIPS/飞利浦
- 21+
- 02
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- BLF2022-70
- 854533
- PHILIPS/飞利浦
- 22+
- TO-59
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- BLF2022-70
- 655
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- 255
- PHILIPS
- 16+
- HDX
- 全新原装库存现货热卖
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- BLF2022-70
- 20
- PHI
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- 02+
- 原装现货，欢迎询价
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- BLF2022-70
- 30690
- PHI
- 2021+
- 02+
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- BLF2022-70
- 655
- PHILIPS
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- BLF2022-70
- 230
- PHILIPPNES
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-
- 主营高频管
- 立即询价
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- BLF2022-70
- 655
- PHILIPS
- 14+
- 高频管
- 专营高频管模块，全新原装！
- 立即询价