-
[北京]010-87982920
-
[深圳]0755-82701186
- 您现在的位置：PDF下载目录 > BLF178P112 PDF下载、代理商、价格
BLF178P112
型号：BLF178P112
厂商：NXP
批号：22+
封装：SMD
PDF下载
BLF3G22-30
UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
BLF4G10-160
UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130
UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
相关PDF
相关代理商
- 代理商
- 型号
- 数量
- 厂商
- 批号
- 封装
- 交易说明
- 询价
- QQ
-
- BLF178P112
- 68900
- NXP
- 22+
- SMD
- 原装正品现货，?支持检测
- 立即询价
-
- BLF178P112
- 66889
- NXP
- 22+
- SMD
- 授权代理直销,原厂原装现货,假一罚十,特价销售
- 立即询价
-
- BLF178P112
- 66889
- NXP
- 22+
- SMD
- 授权代理直销,原厂原装现货,假一罚十,特价销售
- 立即询价
-
- BLF178P112
- 28
- NXP
- 22+
- SMD
- 原装正品力挺实单
- 立即询价
-
- BLF178P112
- 28
- NXP
- 1529+
- SMD
-
- 立即询价
-
- BLF178P112
- 1028
- NXP
- 24+
- SMD
- 原厂原装正品现货
- 立即询价
-
- BLF178P112
- 5000
- NXP
- 23+
-
- 全新原装正品价优
- 立即询价
-
- BLF178P112
- 36
- NXP
- 1529+
- SMD
- 原装现货，欢迎询价
- 立即询价
-
- BLF178P112
- 30690
- NXP
- 2021+
- SMD
- 全新原装现货，全网最低，假一罚十
- 立即询价
-
- BLF178P112
- 28
- NXP
- 1529+
- SMD
- 进口原装现货
- 立即询价
-
- BLF178P112
- 18500
- NXP
- 1806+
- 假一赔十
- ★一级分销★原厂原装现货★免费技术支持★假一罚十★
- 立即询价
-
- BLF178P112
- 12500
- NXP Semiconductors
- 13+/14+
- 原厂封装！
- 原装正品！价优！优势货源放心订购！
- 立即询价
-
- BLF178P112
- 12500
- NXP
- 16+★★进口原装★
- SOT539A
- 100%全新原装现货热卖中★免费提供样板和技术支持
- 立即询价
-
- BLF178P112
- 5000
- Ampleon
- 17+
- N/A
- 全新原装现货
- 立即询价
-
- BLF178P112
- 38
- NXP
- 1529+
- SMD
- ★现货库存★进口原装★可接受订货★真诚为您服务 ★
- 立即询价