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BLF178P，112
型号：BLF178P，112
厂商：NXP/恩智浦
批号：2021+
封装：SMD
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BLF3G22-30
UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
BLF4G10-160
UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G20S-110B
UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G22-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22-130
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB
BLF4G22LS-130
UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
BLF4G22S-100
UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
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北京耐芯威科技有限公司
010-62104931
- BLF178P,112
-
- 原厂封装
- 16+/17+
- 10000
- 只做原装正品 欢迎洽谈 电话010-6210493..
- 立即询价
-
深圳市桂鹏科技有限公司
0755-82810298
- BLF178P,112
- 82810298
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- 15+
-
- 深圳现货★原厂品质★提供PCB板配单业务
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- BLF178P,112 现货
- 18000
- NXP
- 18+★★优势热卖★
- SMD
- 每一片都是来自原厂★原装正品，价格超越代理★★★★..
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- BLF178P,112
-
- 15+
- SMDQFN
- 400
- 微波射频元件原装正品假一赔百找散新翻新料
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-
- BLF178P,112
- 33
- Ampleon USA Inc.
- 17+
- SOT539A
- 原装正品，授权分销商现货库存，价优，货期快
- 立即询价
-
- BLF178P,112
- 6000
- NXP Semiconductors
- 1823+
- 原厂原封
- 十年信誉，只做原装，真实库存
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-
- BLF178P,112
- 86720
- NXP
- 22+
- SSOP-24
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- BLF178P,112
- 6638
- NXP
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- SMD
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- BLF178P,112
- 12560
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- 18+
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- 28
- NXP/恩智浦
- 1529+
- SMD
- 进口原装现货 13714450367徐小姐
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- BLF178P,112
- 60
- 8~12 weeks
- 14+
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- 原装现货/价格优势
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- BLF178P,112
- 5000
- Ampleon
- NEW
- SOT539A
- 代理现货，可订期货，
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- BLF178P,112
- 10000
- 原厂
- 17+
- N/A
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- BLF178P,112
- 6000
- NXP
- 2126+
- SMD
- 原装国内现货
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