型号：AP511CK6TR-G1
厂商：DIODES/美台
批号：2021+
封装：NA
AP513
1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
AP5321GM-HF
100 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
AP5331GM-HF
150 V, 0.16 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
AP5521GH-HF
100 V, 0.15 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
AP5521GM-HF
2.5 A, 100 V, 0.15 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
AP55T10GH-HF
56 A, 100 V, 0.0165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP55T10GP-HF
56 A, 100 V, 0.0165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP55T10GS-HF
54 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AP560
10 MHz - 500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AP561
10 MHz - 500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
18138401919